Product Overview
Omni R&D, LLC is proud to introduce the Omni MPVD 3000, a cutting-edge Microwave Plasma Chemical Vapor Deposition (MPCVD) system that revolutionizes thin-film deposition. Designed for a wide range of applications, including semiconductors, photovoltaics, and nanotechnology, this state-of-the-art machine harnesses the power of advanced plasma technology to deliver uncompromised performance and exceptional results.
The Omni MPVD 3000 is a complete solution for thin-film deposition, offering precise control, high-quality film production, and unparalleled versatility. By employing an intelligent microwave power supply, this machine optimizes plasma generation across various operating conditions, ensuring uniform and repeatable deposition. The advanced temperature control system maintains stable and controlled substrate temperatures, guaranteeing the highest quality and consistency of deposited films. With support for a wide range of precursor gases, the Omni MPVD 3000 enables the creation of diverse thin films tailored to specific application requirements.
Features:
- Advanced MPCVD technology for increased precursor reaction rates and reduced reaction temperatures
- High-stability plasma excitation from 10mbar to chamber pressure, minimizing plasma state fluctuations
- Continuous wave or pulse power of 15KW-20KW with adjustable output power, phase, and duty cycle
- Intelligent microwave power supply for optimized plasma generation and precise deposition control
- Advanced temperature control system for stable, uniform substrate temperatures and high-quality films
- Support for a wide range of precursor gases, enabling diverse thin film creation
- User-friendly interface for smooth operation, easy process control, and simplified maintenance
- Multiple safety features, including interlocking system, automatic shutdown, and state-of-the-art ventilation
Specifications: Microwave Power Supply:
- Frequency: 2450MHz
- Power: 6KW/10KW/20KW
- Frequency Stability: -50 to 50 PPM
- Microwave Leak: 1 to 3 m/Wcm²
- Power Stability: 1 to 3%
- Output Power Adjustment Step: 1W
- Phase Adjustment Range (optional): 0 to 360°
- Phase Adjustment Step (optional): 5.6°
- Output Harmonic: -40 dBc
- Output Spurious: -45 dBc
- Output Impedance: 50Ω
- Working Temperature: 0 to 70°C
- Overall Efficiency: 40/50%
- Pulse Modulation: Optional
- Cooling Method: Water
Mass Flowmeter:
- Accuracy: ±1.5%F.S
- Linearity: ±0.5~1.5% F.S
- Repeatability: ±0.2% F.S
- Response Time: Gas Characteristics: 1~4 Sec, Electrical Characteristics: 10 Sec
- Working Pressure Range: 0.1~0.5 MPa
- Maximum Pressure: 3MPa
Vacuum Unit:
- Mechanical Pump Pumping Rate: 10m³/h
- Molecular Pump Pumping Rate: 100L/S
- Compound Vacuum Gauge: 2 Measurement Channels (1 Resistance, 1 Ionization)
- Operating Mode: Manual/Auto
Equipped With:
- Intelligent microwave power supply for optimized plasma generation
- Advanced temperature control system for stable, uniform substrate temperatures
- Support for a wide range of precursor gases
- User-friendly interface for smooth operation and easy process control
- Multiple safety features, including interlocking system and automatic shutdown
- Expert technical support and training from Omni R&D, LLC
